Ububanzi be-Wavelength | : | 190-1100nm |
I-Spectral Bandwidth | : | 2nm (5nm, 4nm, 1nm, 0,5nm ngokuzithandela) |
Ukunemba kwe-Wavelength | : | ±0.3nm |
I-Wavelength Reproducibility | : | ≤0.15nm |
Isistimu ye-Photometric | : | I-Double beam, ukuskena okuzenzakalelayo, izitholi ezimbili |
Ukunemba kwe-Photometric | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
I-Photometric Reproducibility | : | ≤0.15%τ |
Imodi yokusebenza | : | T, A, C, E |
Ibanga le-Photometric | : | -0.3-3.5A |
I-Stray Light | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
I-Baseline Flatness | : | ±0.002A |
Ukuzinza | : | ≤0.001A/h (ku-500nm, ngemva kokufudumala) |
Umsindo | : | ±0.001A (ku-500nm, ngemva kokufudumala) |
Bonisa | : | 6 amayintshi high ukukhanya blue LCD |
Umtshina | : | I-Silicon photo-diode |
Amandla | : | I-AC 220V/50Hz, 110V/60Hz 180W |
Ubukhulu | : | 630×470×210mm |
Isisindo | : | 26kg |
Ububanzi be-Wavelength | : | 190-1100nm |
I-Spectral Bandwidth | : | 2nm (5nm, 4nm, 1nm, 0,5nm ngokuzithandela) |
Ukunemba kwe-Wavelength | : | ±0.3nm |
I-Wavelength Reproducibility | : | 0.15nm |
Isistimu ye-Photometric | : | Ukuqapha kwesilinganiso se-Split-beam, ukuskena okuzenzakalelayo, izitholi ezimbili |
Ukunemba kwe-Photometric | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
I-Photometric Reproducibility | : | 0.2%τ |
Imodi yokusebenza | : | T, A, C, E |
Ibanga le-Photometric | : | -0.3-3A |
I-Stray Light | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
I-Baseline Flatness | : | ±0.002A |
Ukuzinza | : | ≤0.001A/30min (ku-500nm, ngemva kokufudumala) |
Umsindo | : | ±0.001A (ku-500nm, ngemva kokufudumala) |
Bonisa | : | 6 amayintshi high ukukhanya blue LCD |
Umtshina | : | I-Silicon photo-diode |
Amandla | : | I-AC 220V/50Hz, 110V/60Hz 180W |
Ubukhulu | : | 630×470×210mm |
Isisindo | : | 26kg |
Ububanzi be-Wavelength | : | 190-1100nm |
I-Spectral Bandwidth | : | 2nm (5nm, 1nm, ozikhethela) |
Ukunemba kwe-Wavelength | : | ±0.3nm |
I-Wavelength Reproducibility | : | 0.2nm |
Isistimu ye-Photometric | : | Isigxobo esisodwa, i-grating yendiza engu-1200L/mm |
Ukunemba kwe-Photometric | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
I-Photometric Reproducibility | : | ≤0.15%τ |
Imodi yokusebenza | : | T, A(-0.3-3A), C, E |
Ibanga le-Photometric | : | -0.3-3A |
I-Stray Light | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
I-Baseline Flatness | : | ±0.002A |
Ukuzinza | : | ≤0.001A/30min (ku-500nm, ngemva kokufudumala) |
Umsindo | : | ±0.001A (ku-500nm, ngemva kokufudumala) |
Bonisa | : | 6 amayintshi high ukukhanya blue LCD |
Umtshina | : | I-Silicon photo-diode |
Amandla | : | I-AC 220V/50Hz, 110V/60Hz 140W |
Ubukhulu | : | 530×410×210mm |
Isisindo | : | 18kg |
Ububanzi be-Wavelength | : | 320-1100nm |
I-Spectral Bandwidth | : | 2nm (5nm, 1nm, ozikhethela) |
Ukunemba kwe-Wavelength | : | ±0.5nm |
I-Wavelength Reproducibility | : | 0.2nm |
Isistimu ye-Photometric | : | Isigxobo esisodwa, i-grating yendiza engu-1200L/mm |
Ukunemba kwe-Photometric | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
I-Photometric Reproducibility | : | ≤0.15%τ |
Imodi yokusebenza | : | T, A, C, E |
Ibanga le-Photometric | : | -0.3-3A |
I-Stray Light | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
I-Baseline Flatness | : | ±0.002A |
Ukuzinza | : | ≤0.001A/30min (ku-500nm, ngemva kokufudumala) |
Umthombo Wokukhanya | : | Isibani se-tungsten halogen |
Bonisa | : | 6 amayintshi high ukukhanya blue LCD |
Umtshina | : | I-Silicon photo-diode |
Amandla | : | I-AC 220V/50Hz, 110V/60Hz 140W |
Ubukhulu | : | 530×410×210mm |
Isisindo | : | 18kg |